收藏本站
N
O
T RE
CO
MMENDED F
O
R NEW DE
S
I
G
N
NOT RECOMMENDED FOR NEW DESIGN
2
Freescale Semiconductor
RF Product Device Data
MRF373ALR1 MRF373ALSR1
Table 4. Electrical Characteristics (TC
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
(VGS
= 0 Vdc, I
D
=1
μA)
V(BR)DSS
70
?
?
Vdc
Zero Gate Voltage Drain Current
(VDS
= 32 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
1
μAdc
Gate-Source Leakage Current
(VGS
= 5 Vdc, V
DS
= 0 Vdc)
IGSS
?
?
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS
= 10 V, I
D
= 200
μA)
VGS(th)
2
2.9
4
Vdc
Gate Quiescent Voltage
(VDS
= 32 V, I
D
= 100 mA)
VGS(Q)
2.5
3.3
4.5
Vdc
Drain-Source On-Voltage
(VGS
= 10 V, I
D
= 3 A)
VDS(on)
?
0.41
0.45
Vdc
Dynamic Characteristics
Input Capacitance
(VDS
= 32 V, V
GS
= 0, f = 1 MHz)
Ciss
?
98.5
?
pF
Output Capacitance
(VDS
= 32 V, V
GS
= 0, f = 1 MHz)
Coss
?
49
?
pF
Reverse Transfer Capacitance
(VDS
= 32 V, V
GS
= 0, f = 1 MHz)
Crss
?
2
?
pF
Functional Characteristics
(50 ohm system)
Common Source Power Gain
(VDD
= 32 V, P
out
= 75 W CW, I
DQ
= 200 mA, f = 860 MHz)
Gps
16.5
18.2
?
dB
Drain Efficiency
(VDD
= 32 V, P
out
= 75 W CW, I
DQ
= 200 mA, f = 860 MHz)
η
56
60
?
%
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
MRF374A IC MOSFET RF N-CHAN NI-650
MRF377HR3 MOSFET RF N-CHAN 32V 45W NI-860C
MRF5P20180HR6 MOSFET RF N-CHAN 28V 38W NI-1230
MRF5P21045NR1 MOSFET RF N-CH TO-270-4
MRF5P21180HR6 MOSFET RF N-CHAN 28V 38W NI-1230
MRF5P21240HR6 MOSFET RF N-CHAN 28V 52W NI-1230
MRF5S19060MR1 MOSFET RF N-CH 28V 12W TO-270-4
MRF5S19060NBR1 MOSFET N-CH 12W 28V TO-272-4
相关代理商/技术参数
MRF373AR1 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS
MRF373ASR1 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS
MRF373R1 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS
MRF373S 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF373SR1 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS
MRF374 制造商:ASI 制造商全称:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR
MRF374A 功能描述:射频MOSFET电源晶体管 RF POWER LDMOS U650 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF374A_06 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors